姓名：胡功伟

职称：讲师

毕业学校：电子科技大学

学位：理学博士

所在单位：理学院

学科：半导体器件物理

办公地点：理科楼L1610

电子邮箱：gwhu@ctgu.edu.cn; gwhu@std.uestc.edu.cn

一、基本资料

胡功伟，男，1990年10月，博士，讲师，目前加入了湖北省弱磁探测工程技术研究中心团队，近年来，主要从事第三代半导体中的压电电子学和挠曲电效应的基础研究，以及高性能、高灵敏度、低功耗、高频率和高速率量子传感器件设计，另外，在半导体材料的拓扑相变、自旋轨道耦合、电荷及自旋输运、光电探测等方面也开展大量的前沿工作，截止到目前已在ACS Nano、Nano Energy、Small、Physical Review Applied等国际知名期刊上发表SCI论文30余篇，受邀担任多种国际重要学术期刊审稿人。

二、教育与研究经历

2023年6月-----至今 三峡大学 理学院

2022年2月-----2022年11月，学术访问，广州大学，物理与材料科学学院，刘军丰 教授

2017年9月-----2021年12月，博士，电子科技大学，物理学院，物理学，张岩 教授

2014年9月-----2017年6月，硕士，兰州大学，物理科学与技术学院，理论物理，张岩 教授

2010年9月-----2014年6月，本科，三峡大学，计算机学院，电子信息工程

三、获奖情况

攻读博士研究生期间曾获得多项荣誉和奖励，包括四川省和电子科技大学优秀毕业生，2018年和2020年分别荣获博士研究生国家奖学金各一次、2019年“五粮液奖学金”、2018-2020连续三年获得学业一等奖学金，荣获电子科技大学物理学院最高荣誉“物理荣誉学生”和“优博”等称号。曾在2020年获得国家留学基金委资助前往英国剑桥大学卡文迪许实验室主任课题组联合培养资格（因疫情爆发未能前往）。

四、研究方向

n 高性能应力传感器件设计

n 压电电子学和挠曲电电子学，包括纳米线、异质结、半导体硅和二维材料

n 纤锌矿拓扑量子材料，含拓扑绝缘体、自旋轨道耦合、电子和自旋输运等

n 压电半导体中的光电探测，包括带内带间跃迁、红外及太赫兹光吸收谱

五、科研项目列表

n 2023.07 ~ 2026.06，三峡大学高层次人才科研启动基金（授予号：2023RCKJ0035），经费7万，主持

n 2019.12 ~ 2024.09，超低能耗装配式建筑纳米发电机模块与隔热相变材料应用(授予号：191006)，经费500万，参研

n 2019.07 ~ 2022.06，低功耗高性能机器学习算法研究（授予号：190461），经费40万，参研

n 2020.01 ~ 2022.12，自驱动可穿戴脑感知材料与器件（授予号：2020JDJQ0026），经费50万，参研

六、学术论文

1. Gongwei Hu, Fobao Huang *, Wei Huang*. Layer engineering piezotronic effect in two-dimensional homojunction transistors. Nano Energy, 2023, 117: 108880.

2. Gongwei Hu*, Fobao Huang, Jun-Feng Liu*. Ultrasensitive Strain Sensor Based on a Tunnel Junction with an Al N/Ga N Core-Shell Nanowire. Physical Review Applied, 2023, 19(1): 014066.

3. Xin Xue, Fobao Huang, Gongwei Hu*. Spin polarization in quantum point contact based on wurtzite topological quantum well. Physical Chemistry Chemical Physics, 2023, 25(38): 26164-26171.

4. Gongwei Hu*, Fobao Huang, Jun-Feng Liu*. Piezoelectric manipulation of spin–orbit coupling in a Wurtzite heterostructure. Physical Chemistry Chemical Physics, 2023, 25(34): 23001-23011.

5. Minjiang Dan, Gongwei Hu, Lijie Li*, Yan Zhang*. High performance quantum piezotronic tunneling transistor based on edge states of MoS2 nanoribbon. Nano Energy, 2022, 98: 107275.

6. Changming Xie, Minjiang Dan, Gongwei Hu, Nian Liu, Yan Zhang*. Piezo-phototronic spin laser based on wurtzite quantum wells. Nano Energy, 2022, 96: 107100.

7. Nian Liu, Minjiang Dan, Gongwei Hu, Yan Zhang*. Piezo-phototronic intersubband terahertz devices based on layer-dependent van der Waals quantum well. Nano Energy, 2022, 94: 106912.

8. Minjiang Dan, Gongwei Hu, Nian Liu, Yan Zhang*. Effect of strain-induced polarization field on band structure of MoS2 nanoribbon[C]//Journal of Physics: Conference Series. IOP Publishing, 2022, 2230(1): 012022.

9. Mandun Fu, Minjiang Dan, Gongwei Hu, Lijie Li*, Yan Zhang*. Polarization-induced ultrahigh Rashba spin-orbit interaction in ZnO/CdO quantum well. Nano Energy, 2021, 88: 106310.

10. Gongwei Hu, Minjiang Dan, Yan Zhang*. Polarization Field on Edge States of Single-layered MoS2[C]//Journal of Physics: Conference Series. IOP Publishing, 2021, 2002(1): 012053.

11. Yuankai Zhou, Yuncheng Jiang, Minjiang Dan, Gongwei Hu, Lijie Li*, Yan Zhang*. Edge-state transport in circular quantum point contact quantum piezotronic transistors. Nano Energy, 2021, 85: 106002.

12. Minjiang Dan, Gongwei Hu, Jiaheng Nie, Lijie Li*, Yan Zhang*. High‐Performance Piezo‐Phototronic Devices Based on Intersubband Transition of Wurtzite Quantum Well. Small, 2021, 17(13): 2008106.

13. Gongwei Hu, Yan Zhang*. Quantum piezotronic devices based on ZnO/CdO quantum well topological insulator. Nano Energy, 2020, 77: 105154.

14. Gyan Michael, Yaming Zhang, Jiaheng Nie, Dongqi Zheng, Gongwei Hu, Ruhao Liu, Minjiang Dan, Lijie Li*, Yan Zhang*. High-performance piezo-phototronic multijunction solar cells based on single-type two-dimensional materials. Nano Energy, 2020, 76: 105091.

15. Ruhao Liu, Gongwei Hu, Minjiang Dan, Yaming Zhang, Lijie Li*, Yan Zhang*. Piezotronic spin and valley transistors based on monolayer MoS2. Nano Energy, 2020, 72: 104678.

16. Ke Wang, Gongwei Hu, Ruhao Liu, Yaming Zhang, Minjiang Dan, Lijie Li*, Yan Zhang*. Polarization-driven edge-state transport in transition-metal dichalcogenides. Physical Review Applied, 2020, 13(5): 054074.

17. Xin Cui, Yaming Zhang, Gongwei Hu, Lu Zhang, Yan Zhang*. Dynamical charge transfer model for high surface charge density triboelectric nanogenerators. Nano Energy, 2020, 70: 104513.

18. Nian Liu, Gongwei Hu, Minjiang Dan, Ruhao Liu, Yaming Zhang, Lijie Li*, Yan Zhang*. Piezo-phototronic effect on quantum well terahertz photodetector for continuously modulating wavelength. Nano Energy, 2019, 65: 104091.

19. Yaming Zhang, Gongwei Hu, Yan Zhang*, Lucy Li, Morten Willatzen*, Zhong Lin Wang*. High performance piezotronic devices based on non-uniform strain. Nano Energy, 2019, 60: 649-655.

20. Xin Guo, Gongwei Hu, Yaming Zhang, Ruhao Liu, Minjiang Dan, Lijie Li*, Yan Zhang*. Quantum information memory based on reconfigurable topological insulators by piezotronic effect. Nano Energy, 2019, 60: 36-42.

21. Gongwei Hu, Lijie Li*, Yan Zhang*. Two-dimensional electron gas in piezotronic devices. Nano Energy, 2019, 59: 667-673.

22. Gyan Michael, Gongwei Hu, Dongqi Zheng, Yan Zhang*. Piezo-phototronic solar cell based on 2D monochalcogenides materials. Journal of Physics D: Applied Physics, 2019, 52(20): 204001.

23. Ping Zhu, Ziming Zhao, Jiaheng Nie, Gongwei Hu, Lijie Li*, Yan Zhang*. Ultra-high sensitivity strain sensor based on piezotronic bipolar transistor. Nano Energy, 2018, 50: 744-749.

24. Minjiang Dan, Gongwei Hu, Lijie Li*, Yan Zhang*. High performance piezotronic logic nanodevices based on GaN/InN/GaN topological insulator. Nano Energy, 2018, 50: 544-551.

25. Jiaheng Nie, Gongwei Hu, Lijie Li*, Yan Zhang*. Piezotronic analog-to-digital converters based on strain-gated transistors. Nano energy, 2018, 46: 423-427.

26. Gongwei Hu, Yan Zhang*, Lijie Li, Zhong Lin Wang*. Piezotronic transistor based on topological insulators. ACS Nano, 2018, 12(1): 779-785.

27. Gongwei Hu, Yujing Zhang, Lu Luo, Yang Yang, Yan Zhang, Zhong Lin Wang. Piezotronic transistors in nonlinear circuit: Model and simulation. Science China Technological Sciences, 2015, 58: 1348-1354.